Small squeeze alters magnetic behavior in altermagnets
Two studies link mechanical strain to changes in magnetic domains and electrical behavior, pointing to possible applications in spintronics.
Applying slight pressure to altermagnets can alter their magnetism and affect electron movement, researchers at Oak Ridge National Laboratory reported. Their findings, published in Physical Review X and Advanced Materials, identify mechanical strain as a potential means of controlling these materials.
Compression changed the proportions of magnetic domains, regions distinguished by their magnetic arrangements. It also modified the anomalous Hall effect, an electrical phenomenon that the researchers cited as evidence of changes in the materials' electrical behavior.
For the experiments, the team compressed small manganese telluride and iron sulfide crystals using two plates made of titanium. Neutron diffraction measurements at the laboratory's Spallation Neutron Source allowed the scientists to examine the magnetic structures within the samples.
Pengcheng Dai of Rice University, a former neutron scientist at Oak Ridge, said manipulating magnetic domains could influence electron transport and enable further investigation of spintronic technologies. Spintronics processes and stores information through electron spin as well as charge. The researchers said developing suitable materials could potentially support advances in wireless communication and quantum computing.
